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1631In MOCVD growth, the almost linear relationship for group III species between layer composition and gas phase composition in the phosphorus-free system, makes accurate composition control easy, not only in unstrained but also strained quaternary layers,l63l whereas in the conventional quaternary material system, the different thermal stability of arsine and phosphine might lead to problems concerning composition reproducibility and uniformity across large areas. Following these arguments, the layer composition in AlGaInAs is expected to be less sensitive to the growth temperature compared to the composition of GaInAsP layers.

13’l In dry scrubbing systems, active charcoal or other appropriate materials, pyrolyzers, thermal oxidizers, etc. t3*l With both types of scrubbing systems, the concentration of arsine and phosphine during epitaxial growth at the outlet is below the detection limit of several ppb. The MOCVD technology has been established in research laboratories for many years already, as stated in the introduction. In addition, in the last years, this technology has been introduced to manufacturing environments requiring the design of a more fail-safe system.

Winston, H. , and Marsh, 0. , Appl. Phys. , 44:74 (1984) 45. , Ext. Abstr. 31st SpringMtg. Jpn. Sot. Appl. Phys. and Related Societies, Tokyo (April 1984) 46. , Ext. Abstr. 46th Autumn Mtg Jpn. Sot. of Appl. Phys. and Related Societies, Kyoto (October 1985) 47. Chen, R. , Holmes, D. , and Asbeck, P. , Appl. Phys. , 45:459 (1984) 48. , J. Cryst. Growth, 99:680 (1990) 49. Doering, P. , Tobin, R. , Pearah, P. , Tower, J. , and Ware, R. , Semi-Insulating III-VMaterials, (A. G. Mimes and C. J. ), p.

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